2N6325 GP BJT

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  • 656 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 300V 30A 3-Pin TO-63

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Saturation Voltage 1.5@2mA@5mA V
Maximum Collector Emitter Voltage 300 V
Maximum DC Collector Current 30 A
Maximum Power Dissipation 350000 mW
Type NPN