2N6338 GP BJT
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Stock
- 5 GENERAL SEMI
- 2 GENERAL SEMI
- 46 GENERAL SEMICONDUCTOR
- 2 MOTOROLA
- 4515 NEW JERSEY SEMICONDUCTOR
- 213 ON SEMI
- 13 SILICON TRANSISTOR CORP
- 77 TELEDYNE
- 125 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 120 | V |
| Maximum Collector Emitter Saturation Voltage | 1@1A@10A|1.8@2.5A@25A | V |
| Maximum Collector Emitter Voltage | 100 | V |
| Maximum DC Collector Current | 25 | A |
| Maximum Emitter Base Voltage | 6 | V |
| Maximum Operating Temperature | 175 | °C |
| Maximum Power Dissipation | 200000 | mW |
| Type | NPN |