2N6339 GP BJT
Datasheet: View
Stock
- 9 GENERAL SEMICONDUCTOR
- 4 MOTOROLA
- 4780 NEW JERSEY SEMICONDUCTOR
- 25 SILICON TRANSISTOR CORP
- 2 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Maximum Collector Emitter Saturation Voltage | 1.8@2.5mA@10mA | V |
| Maximum Collector Emitter Voltage | 120 | V |
| Maximum DC Collector Current | 30 | A |
| Maximum Operating Temperature | 125 | °C |
| Maximum Power Dissipation | 200000 | mW |
| Type | NPN |