2N6341 GP BJT
Datasheet: View
Stock
- 3 AMPEREX
- 7 API
- 10 GENERAL ELECTRIC
- 40 GENERAL SEMICONDUCTOR
- 1 INTERNATIONAL RECTIFIER
- 960 NEW JERSEY SEMICONDUCTOR
- 108 ON SEMI
- 1 SILICON TRANSISTOR CORP
- 37 SOLITRON
- 4 TIC SEMI
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 180 | V |
| Maximum Collector Emitter Saturation Voltage | 1@1A@10A|1.8@2.5A@25A | V |
| Maximum Collector Emitter Voltage | 150 | V |
| Maximum DC Collector Current | 25 | A |
| Maximum Emitter Base Voltage | 6 | V |
| Maximum Operating Temperature | 175 | °C |
| Maximum Power Dissipation | 200000 | mW |
| Type | NPN |