2N6341A GP BJT
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- 5 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 180 | V |
| Maximum Collector Emitter Saturation Voltage | 1@1A@10A|1.8@2.5A@25A | V |
| Maximum Collector Emitter Voltage | 150 | V |
| Maximum DC Collector Current | 25 | A |
| Maximum Emitter Base Voltage | 6 | V |
| Maximum Operating Temperature | 175 | °C |
| Maximum Power Dissipation | 200000 | mW |
| Type | NPN |