2N6350 Darlington BJT
Datasheet: View
Stock
- 777 NEW JERSEY SEMICONDUCTOR
- 10 SILICON TRANSISTOR CORP
| Features | Values | Unit |
|---|---|---|
| Configuration | Single | |
| Maximum Collector Base Voltage | 80 | V |
| Maximum Collector Emitter Voltage | 80 | V |
| Maximum Continuous DC Collector Current | 5 | A |
| Maximum Emitter Base Voltage | 12 | V |
| Maximum Operating Temperature | 200 | °C |
| Minimum DC Current Gain | 2000@1A@5V|2000@5A@5V|400@10A@5V | |
| Minimum Operating Temperature | -65 | °C |
| Number of Elements per Chip | 1 | |
| Type | NPN |