2N6351 Darlington BJT
Datasheet: View
Stock
- 2567 NEW JERSEY SEMICONDUCTOR
- 68 SILICON TRANSISTOR CORP
- 17 SOLID STATE TRANSISTOR
- 5 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Configuration | Single | |
| Maximum Collector Base Voltage | 150 | V |
| Maximum Collector Emitter Voltage | 150 | V |
| Maximum Continuous DC Collector Current | 5 | A |
| Maximum Emitter Base Voltage | 12 | V |
| Maximum Operating Temperature | 200 | °C |
| Minimum DC Current Gain | 1000@1A@5V|1000@5A@5V|200@10A@5V | |
| Minimum Operating Temperature | -65 | °C |
| Number of Elements per Chip | 1 | |
| Type | NPN |