2N6357 GP BJT

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  • 1115 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 120V 10A 3-Pin(2+Tab) TO-3

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Saturation Voltage 1@1mA@10mA V
Maximum Collector Emitter Voltage 120 V
Maximum DC Collector Current 10 A
Maximum Power Dissipation 140000 mW
Type NPN