2N6365 GP BJT

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  • 1847 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 150V 25A 3-Pin(2+Tab) TO-3

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 180 V
Maximum Collector Emitter Saturation Voltage 1@1A@10A|1.8@2.5A@25A V
Maximum Collector Emitter Voltage 150 V
Maximum DC Collector Current 25 A
Maximum Emitter Base Voltage 6 V
Maximum Operating Temperature 175 °C
Maximum Power Dissipation 200000 mW
Type NPN