2N6373 GP BJT
Datasheet: View
Stock
- 3000 NEW JERSEY SEMICONDUCTOR
- 96 RAYTHEON
- 221 RCA
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Material | Si | |
| Maximum Collector Base Voltage | 70 | V |
| Maximum Collector Emitter Saturation Voltage | 1@0.2A@2A|2@1.2A@6A | V |
| Maximum Collector Emitter Voltage | 60 | V |
| Maximum DC Collector Current | 6 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 40000 | mW |
| Maximum Transition Frequency | 4(Min) | MHz |
| Type | NPN |