2N6376 GP BJT
Datasheet: View
Stock
- 1 MOTOROLA
- 120 NATIONAL SEMICONDUCTOR
- 7076 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Material | Si | |
| Maximum Collector Base Voltage | 90 | V |
| Maximum Collector Emitter Saturation Voltage | 1@0.25A@2.5A|2@1.2A@6A | V |
| Maximum Collector Emitter Voltage | 80 | V |
| Maximum DC Collector Current | 6 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 40000 | mW |
| Maximum Transition Frequency | 4(Min) | MHz |
| Type | PNP |