2N6376 GP BJT

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  • 1 MOTOROLA
  • 120 NATIONAL SEMICONDUCTOR
  • 7076 NEW JERSEY SEMICONDUCTOR

Trans GP BJT PNP 80V 6A 3-Pin(2+Tab) TO-66 Sleeve

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Features Values Unit
Category Bipolar Power
Material Si
Maximum Collector Base Voltage 90 V
Maximum Collector Emitter Saturation Voltage 1@0.25A@2.5A|2@1.2A@6A V
Maximum Collector Emitter Voltage 80 V
Maximum DC Collector Current 6 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 40000 mW
Maximum Transition Frequency 4(Min) MHz
Type PNP