2N6378 GP BJT

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  • 2 HUGHES
  • 125 NEW JERSEY SEMICONDUCTOR
  • 1 SOLITRON

Trans GP BJT PNP 100V 50A 3-Pin(2+Tab) TO-3

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 120 V
Maximum Collector Emitter Saturation Voltage 1.2@2A@20A|3@10A@50A V
Maximum Collector Emitter Voltage 100 V
Maximum DC Collector Current 50 A
Maximum Emitter Base Voltage 6 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 250000 mW
Maximum Transition Frequency 30(Min) MHz
Type PNP