2N6379 GP BJT
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- 219 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 140 | V |
| Maximum Collector Emitter Saturation Voltage | 1.2@2A@20A|3@10A@50A | V |
| Maximum Collector Emitter Voltage | 120 | V |
| Maximum DC Collector Current | 50 | A |
| Maximum Emitter Base Voltage | 6 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 250000 | mW |
| Maximum Transition Frequency | 30(Min) | MHz |
| Type | PNP |