2N637B GP BJT
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Stock
- 3 ELECTRONIC TRANSISTOR
- 647 NEW JERSEY SEMICONDUCTOR
- 2 SOLITRON
- 1 TRANS
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Material | Si | |
| Maximum Collector Base Voltage | 90 | V |
| Maximum Collector Emitter Saturation Voltage | 1@0.25A@2.5A|2@1.2A@6A | V |
| Maximum Collector Emitter Voltage | 80 | V |
| Maximum DC Collector Current | 6 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 40000 | mW |
| Maximum Transition Frequency | 4(Min) | MHz |
| Type | PNP |