2N6381 GP BJT
Datasheet: View
Stock
- 0 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Maximum Collector Emitter Saturation Voltage | 1.2@2mA@20mA | V |
| Maximum Collector Emitter Voltage | 100 | V |
| Maximum DC Collector Current | 50 | A |
| Maximum Power Dissipation | 250000 | mW |
| Type | PNP |