2N6409 GP BJT

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  • 99 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 80V 2A

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Features Values Unit
Category Bipolar Power
Material Si
Maximum Collector Base Voltage 100 V
Maximum Collector Emitter Voltage 80 V
Maximum DC Collector Current 2 A
Maximum Operating Temperature 140 ᄀC
Maximum Power Dissipation 12000 mW
Maximum Transition Frequency 50 MHz
Type NPN