2N6422 GP BJT
Datasheet: View
Stock
- 2 GENERAL TRANSISTOR
- 3 MOTOROLA
- 113 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 500 | V |
| Maximum Collector Emitter Saturation Voltage | 0.75@125mA@1A | V |
| Maximum Collector Emitter Voltage | 300 | V |
| Maximum DC Collector Current | 2 | A |
| Maximum Emitter Base Voltage | 6 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 35000 | mW |
| Maximum Transition Frequency | 10(Min) | MHz |
| Type | PNP |