2N6423-2 GP BJT

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  • 120 NEW JERSEY SEMICONDUCTOR

Trans GP BJT PNP 300V 2A 3-Pin(2+Tab) TO-66

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 500 V
Maximum Collector Emitter Saturation Voltage 1@75mA@750mA V
Maximum Collector Emitter Voltage 300 V
Maximum DC Collector Current 2 A
Maximum Emitter Base Voltage 6 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 35000 mW
Maximum Transition Frequency 15(Min) MHz
Type PNP