2N6424 GP BJT

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  • 20 MOTOROLA
  • 457 NEW JERSEY SEMICONDUCTOR

Trans GP BJT PNP 225V 1A 3-Pin(2+Tab) TO-66

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 250(Min) V
Maximum Collector Emitter Saturation Voltage 2.5@0.25A V
Maximum Collector Emitter Voltage 225(Min) V
Maximum DC Collector Current 1 A
Maximum Power Dissipation 20000 mW
Maximum Transition Frequency 10(Min) MHz
Type PNP