2N6425 GP BJT
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- 29 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 325(Min) | V |
| Maximum Collector Emitter Saturation Voltage | 2.5@0.25A | V |
| Maximum Collector Emitter Voltage | 300(Min) | V |
| Maximum DC Collector Current | 1 | A |
| Maximum Power Dissipation | 20000 | mW |
| Maximum Transition Frequency | 10(Min) | MHz |
| Type | PNP |