2N6428 GP BJT

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  • 4555 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 50V 0.2A 3-Pin TO-92 Sleeve

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Features Values Unit
Category Bipolar Small Signal
Material Si
Maximum Collector Base Voltage 60 V
Maximum Collector Emitter Saturation Voltage 0.2@0.5mA@10mA|0.6@5mA@100mA V
Maximum Collector Emitter Voltage 50 V
Maximum DC Collector Current 0.2 A
Maximum Emitter Base Voltage 6 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 625 mW
Maximum Transition Frequency 700 MHz
Type NPN