2N6431 GP BJT

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  • 42 MOTOROLA
  • 2763 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 300V 0.1A 3-Pin TO-18 Box

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Features Values Unit
Category Bipolar Small Signal
Configuration Single
Material Si
Maximum Collector Base Voltage 300 V
Maximum Collector Emitter Saturation Voltage 0.5@20mA V
Maximum Collector Emitter Voltage 300 V
Maximum DC Collector Current 0.1 A
Maximum Emitter Base Voltage 6 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 1800 mW
Maximum Transition Frequency 50(Min) MHz
Type NPN