2N6438 GP BJT

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Stock

  • 9 MOTOROLA
  • 11615 NEW JERSEY SEMICONDUCTOR
  • 20 RFGAIN
  • 1 SILICON TRANSISTOR CORP

Trans GP BJT PNP 120V 25A 3-Pin(2+Tab) TO-3

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Saturation Voltage 1@1mA@10mA V
Maximum Collector Emitter Voltage 120 V
Maximum DC Collector Current 25 A
Maximum Operating Temperature 125 °C
Maximum Power Dissipation 200000 mW
Type PNP