2N6453 JFET
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- 960 NEW JERSEY SEMICONDUCTOR
- 9 TEXAS INSTRUMENT
Trans JFET N-CH Si
Request For Quote| Features | Values | Unit |
|---|---|---|
| Channel Type | N | |
| Configuration | Single | |
| Material | Si | |
| Maximum Drain Gate Voltage | -20 | V |
| Maximum Gate Source Voltage | -20 | V |
| Maximum Power Dissipation | 360 | mW |