2N6455 GP BJT

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  • 10 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 25V 7A

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Features Values Unit
Category Bipolar Power
Material Si
Maximum Collector Base Voltage 45 V
Maximum Collector Emitter Voltage 25 V
Maximum DC Collector Current 7 A
Maximum Operating Temperature 200 ᄀC
Maximum Power Dissipation 60000 mW
Maximum Transition Frequency 75 MHz
Type NPN