2N6464 GP BJT
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- 15 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Configuration | Single | |
| Maximum Collector Emitter Voltage | 250 | V |
| Maximum DC Collector Current | 0.1 | A |
| Maximum Power Dissipation | 1000 | mW |
| Maximum Transition Frequency | 200(Typ) | MHz |
| Type | NPN |