2N6465 GP BJT

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  • 3741 NEW JERSEY SEMICONDUCTOR
  • 324 SILICON TRANSISTOR CORP

Trans GP BJT NPN 100V 4A 3-Pin(2+Tab) TO-66

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Saturation Voltage 3@0.8mA@1.5mA V
Maximum Collector Emitter Voltage 100 V
Maximum DC Collector Current 4 A
Maximum Power Dissipation 40000 mW
Type NPN