2N6488 GP BJT
Datasheet: View
Stock
- 847 MOTOROLA
- 111 NATIONAL SEMICONDUCTOR
- 6013 NEW JERSEY SEMICONDUCTOR
- 10 RCA
- 206 RF POWER
- 6 SGS
- 4 SOLITRON
- 19181 ST MICRO
- 40 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 90 | V |
| Maximum Collector Emitter Saturation Voltage | 1.3@0.5A@5A|3.5@5A@15A | V |
| Maximum Collector Emitter Voltage | 80 | V |
| Maximum DC Collector Current | 15 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 75000 | mW |
| Maximum Transition Frequency | 5(Min) | MHz |
| Type | NPN |