2N6491 GP BJT
Datasheet: View
Stock
- 489 HARRIS
- 391 MOTOROLA
- 76 NATIONAL SEMICONDUCTOR
- 41130 NEW JERSEY SEMICONDUCTOR
- 10 RCA
- 56 SGS
- 66 SOLID STATE TRANSISTOR
- 15095 ST MICRO
- 58 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 90 | V |
| Maximum Collector Emitter Saturation Voltage | 1.3@0.5A@5A|3.5@5A@15A | V |
| Maximum Collector Emitter Voltage | 80 | V |
| Maximum DC Collector Current | 15 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 75000 | mW |
| Maximum Transition Frequency | 5(Min) | MHz |
| Type | PNP |