2N6495 GP BJT

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  • 5 API
  • 2475 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 80V 10A 3-Pin(2+Tab) TO-66

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Saturation Voltage 1.5@0.1mA@10mA V
Maximum Collector Emitter Voltage 80 V
Maximum DC Collector Current 10 A
Maximum Power Dissipation 70000 mW
Type NPN