2N6497 GP BJT
Datasheet: View
Stock
- 256 MOTOROLA
- 25958 NEW JERSEY SEMICONDUCTOR
- 18 SGS
- 45 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 350 | V |
| Maximum Collector Emitter Saturation Voltage | 1@500mA@2.5A|5@2A@5A | V |
| Maximum Collector Emitter Voltage | 250 | V |
| Maximum DC Collector Current | 5 | A |
| Maximum Emitter Base Voltage | 6 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 80000 | mW |
| Maximum Transition Frequency | 5(Min) | MHz |
| Type | NPN |