2N650A GP BJT
Datasheet: View
Stock
- 18 ADVANCED SEMI
- 1 ELECTRONIC TRANSISTOR
- 5 ESI
- 638 NEW JERSEY SEMICONDUCTOR
- 1 SOLITRON
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Maximum Collector Emitter Saturation Voltage | 1.5@0.3mA@3mA | V |
| Maximum Collector Emitter Voltage | 90 | V |
| Maximum DC Collector Current | 4 | A |
| Maximum Power Dissipation | 35000 | mW |
| Type | PNP |