2N6517 GP BJT

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  • 18 INTERMETALL
  • 659 MOTOROLA
  • 9 NEW JERSEY SEMICONDUCTOR
  • 641 SIGNETICS
  • 6 SOLID STATE TRANSISTOR
  • 484 SOLITRON
  • 1 WORLD WIDE

Trans GP BJT NPN 350V 0.5A 3-Pin TO-92 Bulk

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Features Values Unit
Category Bipolar Small Signal
Configuration Single
Maximum Collector Base Voltage 350 V
Maximum Collector Emitter Saturation Voltage 0.3@1mA@10mA 0.35@2mA@20mA
Maximum Collector Emitter Voltage 350 V
Maximum DC Collector Current 0.5 A
Maximum Emitter Base Voltage 6 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 625 mW
Maximum Transition Frequency 200 MHz
Type NPN