2N6517 GP BJT
Datasheet: View
Stock
- 18 INTERMETALL
- 659 MOTOROLA
- 9 NEW JERSEY SEMICONDUCTOR
- 641 SIGNETICS
- 6 SOLID STATE TRANSISTOR
- 484 SOLITRON
- 1 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Small Signal | |
| Configuration | Single | |
| Maximum Collector Base Voltage | 350 | V |
| Maximum Collector Emitter Saturation Voltage | 0.3@1mA@10mA | 0.35@2mA@20mA |
| Maximum Collector Emitter Voltage | 350 | V |
| Maximum DC Collector Current | 0.5 | A |
| Maximum Emitter Base Voltage | 6 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 625 | mW |
| Maximum Transition Frequency | 200 | MHz |
| Type | NPN |