2N6518 GP BJT

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  • 23445 NEW JERSEY SEMICONDUCTOR

Trans GP BJT PNP 250V 0.5A 3-Pin TO-92

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Features Values Unit
Category Bipolar Small Signal
Configuration Single
Material Si
Maximum Collector Base Voltage 250 V
Maximum Collector Emitter Saturation Voltage 0.3@1mA@10mA 0.35@2mA@20mA
Maximum Collector Emitter Voltage 250 V
Maximum DC Collector Current 0.5 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 625 mW
Maximum Transition Frequency 200 MHz
Type PNP