2N651A GP BJT

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  • 3 GENERAL INSTRUMENT
  • 56 MOTOROLA
  • 659 NEW JERSEY SEMICONDUCTOR
  • 1 WORLD WIDE

Trans GP BJT PNP 0.5A

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Features Values Unit
Category Bipolar Small Signal
Configuration Single
Material Ge
Maximum Collector Base Voltage 45 V
Maximum Collector Emitter Saturation Voltage 0.25@1.67A@50mA|0.5@3.33mA@100mA V
Maximum DC Collector Current 0.5 A
Maximum Emitter Base Voltage 30 V
Maximum Operating Temperature 100 °C
Maximum Power Dissipation 200 mW
Type PNP