2N652A GP BJT

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  • 21 ELECTRONIC TRANSISTOR
  • 1 GENERAL INSTRUMENT
  • 3 MOTOROLA
  • 1033 NEW JERSEY SEMICONDUCTOR
  • 5 SNSITRON
  • 49 SOLID STATE TRANSISTOR
  • 1 TEXAS INSTRUMENT

Trans GP BJT PNP 0.5A

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Features Values Unit
Category Bipolar Small Signal
Configuration Single
Material Ge
Maximum Collector Base Voltage 45 V
Maximum Collector Emitter Saturation Voltage 0.25@1.25mA@50mA|0.5@2.5mA@100mA V
Maximum DC Collector Current 0.5 A
Maximum Emitter Base Voltage 30 V
Maximum Operating Temperature 100 °C
Maximum Power Dissipation 200 mW
Type PNP