2N6536 GP BJT

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  • 2050 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 100V 8A 3-Pin(2+Tab) TO-66

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Voltage 100 V
Maximum DC Collector Current 8 A
Maximum Power Dissipation 14000 mW
Maximum Transition Frequency 20(Typ) MHz
Type NPN