2N6547 GP BJT
Datasheet: View
Stock
- 19 HARRIS
- 139 MATASHITA
- 105 MOTOROLA
- 5239 NEW JERSEY SEMICONDUCTOR
- 39 RCA
- 78 SGS
- 8 ST MICRO
- 9 TOMSON
- 2 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Emitter Saturation Voltage | 1.5@2A@10A|5@3A@15A | V |
| Maximum Collector Emitter Voltage | 400 | V |
| Maximum DC Collector Current | 15 | A |
| Maximum Emitter Base Voltage | 8 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 175000 | mW |
| Type | NPN |