2N6549 Darlington BJT
Datasheet: View
Stock
- 168 MOTOROLA
- 2 NATIONAL SEMICONDUCTOR
- 920 NEW JERSEY SEMICONDUCTOR
- 2 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Configuration | Single | |
| Maximum Base Emitter Saturation Voltage | 2@2mA@1A | V |
| Maximum Collector Base Voltage | 50 | V |
| Maximum Collector Emitter Voltage | 40 | V |
| Maximum Continuous DC Collector Current | 2 | A |
| Maximum Emitter Base Voltage | 12 | V |
| Maximum Operating Temperature | 150 | °C |
| Minimum DC Current Gain | 15000@200mA@5V|10000@500mA@5V|3@1A@5V | |
| Minimum Operating Temperature | -65 | °C |
| Number of Elements per Chip | 1 | |
| Type | NPN | |
| Typical Current Gain Bandwidth | 100(Min) | MHz |