2N6551 GP BJT
Datasheet: View
Stock
- 45 MICROSEMI CONDUCTOR
- 21 MOTOROLA
- 1213 NEW JERSEY SEMICONDUCTOR
- 2 SOLID SATE
- 9 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 60 | V |
| Maximum Collector Emitter Saturation Voltage | 0.5@10mA@250mA|1@100mA@1A | V |
| Maximum Collector Emitter Voltage | 60 | V |
| Maximum DC Collector Current | 1 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 2000 | mW |
| Maximum Transition Frequency | 375 | MHz |
| Type | NPN |