2N6556 GP BJT

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  • 63 NEW JERSEY SEMICONDUCTOR

Trans GP BJT PNP 100V 1A 3-Pin(3+Tab) TO-202

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 100 V
Maximum Collector Emitter Saturation Voltage 0.5@10mA@250mA|1@100mA@1A V
Maximum Collector Emitter Voltage 100 V
Maximum DC Collector Current 1 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 2000 mW
Maximum Transition Frequency 375 MHz
Type PNP