2N6559 GP BJT
Datasheet: View
Stock
- 2 MOTOROLA
- 410 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 350 | V |
| Maximum Collector Emitter Saturation Voltage | 0.6@3mA@30mA|1.5@5mA@50mA | V |
| Maximum Collector Emitter Voltage | 350 | V |
| Maximum DC Collector Current | 0.5 | A |
| Maximum Emitter Base Voltage | 6 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 2000 | mW |
| Maximum Transition Frequency | 200 | MHz |
| Type | NPN |