2N6563 GP BJT

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  • 600 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 300V 10A 3-Pin TO-61

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Saturation Voltage 0.75@1mA@5mA V
Maximum Collector Emitter Voltage 300 V
Maximum DC Collector Current 10 A
Maximum Emitter Base Voltage 5 V
Maximum Power Dissipation 100000 mW
Type NPN