2N6579 GP BJT

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  • 5 GENERAL SEMI
  • 32 GENERAL SEMICONDUCTOR
  • 3 MOTOROLA
  • 105 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 350V 12A 3-Pin(2+Tab) TO-3

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Saturation Voltage 1.5@0.5mA@3mA V
Maximum Collector Emitter Voltage 350 V
Maximum DC Collector Current 12 A
Maximum Power Dissipation 125000 mW
Type NPN