2N6581 GP BJT

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  • 47 GENERAL SEMICONDUCTOR
  • 103 NEW JERSEY SEMICONDUCTOR
  • 16 TECCOR

Trans GP BJT NPN 450V 10A 3-Pin(2+Tab) TO-3

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Saturation Voltage 1.5@0.5mA@3mA V
Maximum Collector Emitter Voltage 450 V
Maximum DC Collector Current 10 A
Maximum Power Dissipation 125000 mW
Type NPN