2N6582 GP BJT

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  • 2 GENERAL SEMICONDUCTOR
  • 2922 NEW JERSEY SEMICONDUCTOR
  • 8 SOLITRON

Trans GP BJT NPN 350V 10A 3-Pin(2+Tab) TO-3

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Saturation Voltage 1.5@1.4mA@7mA V
Maximum Collector Emitter Voltage 350 V
Maximum DC Collector Current 10 A
Maximum Power Dissipation 125000 mW
Type NPN