2N6583 GP BJT

default part image

Datasheet: View

Stock

  • 4 GENERAL SEMI
  • 3 GENERAL SEMICONDUCTOR
  • 3778 NEW JERSEY SEMICONDUCTOR
  • 60 TOMMORROW

Trans GP BJT NPN 400V 10A 3-Pin(2+Tab) TO-3

Request For Quote
Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Saturation Voltage 1.5@1.4mA@7mA V
Maximum Collector Emitter Voltage 400 V
Maximum DC Collector Current 10 A
Maximum Power Dissipation 125000 mW
Type NPN