2N6587 GP BJT
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- 3 GENERAL SEMICONDUCTOR
- 135 NEW JERSEY SEMICONDUCTOR
Trans GP BJT NPN 450V 10A 3-Pin TO-61
Request For Quote| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Maximum Collector Emitter Saturation Voltage | 1.5@0.5mA@3mA | V |
| Maximum Collector Emitter Voltage | 450 | V |
| Maximum DC Collector Current | 10 | A |
| Maximum Emitter Base Voltage | 9 | V |
| Maximum Power Dissipation | 125000 | mW |
| Type | NPN |