2N659 GP BJT
Datasheet: View
Stock
- 30 ADVANCED SEMI
- 7 ELECTRONIC TRANSISTOR
- 5102 NEW JERSEY SEMICONDUCTOR
- 3 RAYTHEON
- 14 TEXAS INSTRUMENT
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Small Signal | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 350 | V |
| Maximum Collector Emitter Saturation Voltage | 0.3@1mA@10mA|0.35@2mA@20mA|0.5@3mA@30mA|1@5mA@50mA | V |
| Maximum Collector Emitter Voltage | 350 | V |
| Maximum DC Collector Current | 0.5 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 625 | mW |
| Maximum Transition Frequency | 200 | MHz |
| Type | NPN |