2N6590 GP BJT

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  • 942 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 450V 10A 3-Pin TO-61

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Saturation Voltage 1.5@0.5mA@7mA V
Maximum Collector Emitter Voltage 450 V
Maximum DC Collector Current 10 A
Maximum Emitter Base Voltage 9 V
Maximum Power Dissipation 125000 mW
Type NPN